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| 近期推荐: | 热 Wiley 2026暑期线上学习营 | 报名正式开启! | 新 Springer Nature生物医学与生命科学资源合集 | 附免费书单 | 热 全流程投稿协助套餐服务 |
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| 基本信息 | 登录收藏 | |||||||||||||||||||||||||||||
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期刊名字![]() | SEMICONDUCTOR SCIENCE AND TECHNOLOGY SEMICOND SCI TECH (此期刊被最新的JCR期刊SCIE收录) LetPub评分 6.5
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声誉 7.3 影响力 5.5 速度 8.5 | |||||||||||||||||||||||||||||
| 期刊ISSN | 0268-1242 | 安装APP,查看期刊最新消息
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| E-ISSN | 1361-6641 | |||||||||||||||||||||||||||||
| 2025-2026最新IF (数据来源于网友提供) | 注册或登录后,查看IF | |||||||||||||||||||||||||||||
| 实时影响因子 | 截止2026年5月06日:2.08 | |||||||||||||||||||||||||||||
| 2025-2026自引率 | 4.8%点击查看自引率趋势图 | |||||||||||||||||||||||||||||
| 五年IF (数据来源于网友提供) | 1.796数据由网友[hero_traveler_129]收集提供 | |||||||||||||||||||||||||||||
| h-index | 99 | |||||||||||||||||||||||||||||
| CiteScore ( 2026年6月最新版) |
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| 期刊简介 |
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| 期刊官方网站 | http://iopscience.iop.org/journal/0268-1242 | |||||||||||||||||||||||||||||
期刊投稿格式模板 VIP专享 |
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| 期刊投稿网址 | http://mc04.manuscriptcentral.com/sst-iop | |||||||||||||||||||||||||||||
| 该期刊中国学者近期发文 - New | Porous Ga2O3 and defect selective etching via electrochemical path Author: Cao, Hanxing; Yan, Yuchao; He, Jiaxiang; Liu, Yingying; Wu, Defan; Jin, Zhu; Xia, Ning; Zhang, Hui; Yang, Deren Journal: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2026; Vol. 41, Issue 6, pp. -. DOI: 10.1088/1361-6641/ae7203 Hybrid integrated two-dimensional materials for high-speed optoelectronic devices Author: Xiao, Shuqi; Wang, Yi; Tsang, Hon Ki Journal: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2026; Vol. 41, Issue 6, pp. -. DOI: 10.1088/1361-6641/ae73aa Effect of ALD temperature on hydroxyl and performance in Al2O3-based CBRAM Author: Sun, Yi; Xiao, Zhiqiang; Liu, Guozhu; Wei, Jinghe; Liu, Zhichao; Yang, Han; Wei, Yidan; Wei, Yingqiang; Zhao, Wei; Teng, Haoran; Sui, Zhiyuan Journal: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2026; Vol. 41, Issue 6, pp. -. DOI: 10.1088/1361-6641/ae7236 Dynamic on-resistance degradation mechanism of 1200 V enhancement-mode GaN Schottky-gate HEMT devices on the Si substrates Author: Zhao, Yaopeng; Shi, Jiahao; Li, Ang; Luo, Pan; Peng, Shutao; Luo, Jingtao; Yang, Lei; Wen, Hai-Bing; Kai, Liu; Wang, Chong; Wang, Jianyuan; Tan, Cher Ming Journal: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2026; Vol. 41, Issue 6, pp. -. DOI: 10.1088/1361-6641/ae753c | |||||||||||||||||||||||||||||
| 期刊语言要求 | 经LetPub语言功底雄厚的美籍native English speaker精心编辑的稿件,不仅能满足SEMICONDUCTOR SCIENCE AND TECHNOLOGY的语言要求,还能让SEMICONDUCTOR SCIENCE AND TECHNOLOGY编辑和审稿人得到更好的审稿体验,让稿件最大限度地被SEMICONDUCTOR SCIENCE AND TECHNOLOGY编辑和审稿人充分理解和公正评估。LetPub的专业SCI论文编辑服务(包括SCI论文英语润色,同行资深专家修改润色,SCI论文专业翻译,SCI论文格式排版,专业学术制图等)帮助作者准备稿件,已助力全球15万+作者顺利发表论文。部分发表范例可查看:服务好评 论文致谢 。
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| 是否OA开放访问 | No | |||||||||||||||||||||||||||||
| 通讯方式 | IOP PUBLISHING LTD, DIRAC HOUSE, TEMPLE BACK, BRISTOL, ENGLAND, BS1 6BE | |||||||||||||||||||||||||||||
| 出版商 | IOP Publishing Ltd. | |||||||||||||||||||||||||||||
| 涉及的研究方向 | 工程技术-材料科学:综合 | |||||||||||||||||||||||||||||
| 出版国家或地区 | ENGLAND | |||||||||||||||||||||||||||||
| 出版语言 | English | |||||||||||||||||||||||||||||
| 出版周期 | Monthly | |||||||||||||||||||||||||||||
| 出版年份 | 0 | |||||||||||||||||||||||||||||
| 年文章数 | 195点击查看年文章数趋势图 | |||||||||||||||||||||||||||||
| Gold OA文章占比 | 47.98% | |||||||||||||||||||||||||||||
| 研究类文章占比: 文章 ÷(文章 + 综述) | 94.36% | |||||||||||||||||||||||||||||
| WOS期刊JCR分区 ( 2025-2026年最新版) | 注册或登录后,查看WOS分区等级 | |||||||||||||||||||||||||||||
| 期刊分区表预警名单 | 2026年03月发布的新锐学术版:不在预警名单中 2025年03月发布的2025版:不在预警名单中 2024年02月发布的2024版:不在预警名单中 2023年01月发布的2023版:不在预警名单中 2021年12月发布的2021版:不在预警名单中 2020年12月发布的2020版:不在预警名单中 | |||||||||||||||||||||||||||||
| 《新锐期刊分区表》 ( 2026年3月发布) | 点击查看期刊分区表趋势图
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| 期刊分区表 ( 2025年3月升级版) |
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| 期刊分区表 ( 2023年12月旧的升级版) |
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| SCI期刊收录coverage | Science Citation Index Expanded (SCIE) (2020年1月,原SCI撤销合并入SCIE,统称SCIE) Scopus (CiteScore) | |||||||||||||||||||||||||||||
| PubMed Central (PMC)链接 | http://www.ncbi.nlm.nih.gov/nlmcatalog?term=0268-1242%5BISSN%5D | |||||||||||||||||||||||||||||
| 平均审稿速度 | 网友分享经验: 一般,3-6周 | |||||||||||||||||||||||||||||
| 平均录用比例 | 网友分享经验: 容易 | |||||||||||||||||||||||||||||
| LetPub助力发表 | 经LetPub编辑的稿件平均录用比例是未经润色的稿件的1.5倍,平均审稿时间缩短40%。众多作者在使用LetPub的专业SCI论文编辑服务(包括SCI论文英语润色,同行资深专家修改润色,SCI论文专业翻译,SCI论文格式排版,专业学术制图等)后论文在SEMICONDUCTOR SCIENCE AND TECHNOLOGY顺利发表。
快看看作者怎么说吧:服务好评 论文致谢 。 提交文稿 | |||||||||||||||||||||||||||||
| 期刊常用信息链接 |
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| 中国学者近期发表的论文 | |
| 1. | Porous Ga2O3 and defect selective etching via electrochemical path Author: Cao, Hanxing; Yan, Yuchao; He, Jiaxiang; Liu, Yingying; Wu, Defan; Jin, Zhu; Xia, Ning; Zhang, Hui; Yang, Deren Journal: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2026; Vol. 41, Issue 6, pp. -. DOI: 10.1088/1361-6641/ae7203 DOI |
| 2. | Hybrid integrated two-dimensional materials for high-speed optoelectronic devices Author: Xiao, Shuqi; Wang, Yi; Tsang, Hon Ki Journal: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2026; Vol. 41, Issue 6, pp. -. DOI: 10.1088/1361-6641/ae73aa DOI |
| 3. | Effect of ALD temperature on hydroxyl and performance in Al2O3-based CBRAM Author: Sun, Yi; Xiao, Zhiqiang; Liu, Guozhu; Wei, Jinghe; Liu, Zhichao; Yang, Han; Wei, Yidan; Wei, Yingqiang; Zhao, Wei; Teng, Haoran; Sui, Zhiyuan Journal: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2026; Vol. 41, Issue 6, pp. -. DOI: 10.1088/1361-6641/ae7236 DOI |
| 4. | Dynamic on-resistance degradation mechanism of 1200 V enhancement-mode GaN Schottky-gate HEMT devices on the Si substrates Author: Zhao, Yaopeng; Shi, Jiahao; Li, Ang; Luo, Pan; Peng, Shutao; Luo, Jingtao; Yang, Lei; Wen, Hai-Bing; Kai, Liu; Wang, Chong; Wang, Jianyuan; Tan, Cher Ming Journal: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2026; Vol. 41, Issue 6, pp. -. DOI: 10.1088/1361-6641/ae753c DOI |
| 5. | Antireflection and multi-array design for enhanced wall-plug efficiency in UVC LED Author: Yang, Renlong; Deng, Youcai; Zuo, Feng; Lin, Weipeng; Zhang, Zhongying; Zhu, Lihong; Chen, Zhong; Lu, Yijun; Gong, Honglin Journal: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2026; Vol. 41, Issue 6, pp. -. DOI: 10.1088/1361-6641/ae72bd DOI |
| 6. | Perovskite solar cells: a comprehensive review of material design, device structure, and commercialization prospects Author: Xu, Yajun; Yang, Shuheng; Guo, Xiang; Yan, Pingyuan; Chen, Bo; Liu, Mingkai; Cai, Wenhui; Zheng, Jinjie; Zhao, Qiaoe; Pan, Liping; Tang, Yehua; Sun, Luanhong Journal: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2026; Vol. 41, Issue 6, pp. -. DOI: 10.1088/1361-6641/ae762b DOI |
| 7. | Interface engineering of two-dimensional materials for high-performance photodetectors Author: Song, Junming; Zhang, Peng; Lu, Yu; Wu, Xiarui; Lu, Junpeng; Ni, Zhenhua; Zhao, Weiwei; Cui, Yueying; Yang, Fang; Liu, Hongwei Journal: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2026; Vol. 41, Issue 6, pp. -. DOI: 10.1088/1361-6641/ae78f8 DOI |
| 8. | Achieving enhanced electrical performance and suppressed side reactions in NiO/SiC heterojunctions via optimal annealing temperature Author: Li, Yunkai; Pei, Yicheng; Wei, Moyu; Wang, Yuyang; Zhao, Hanyu; Yan, Guoguo; Liu, Xingfang Journal: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2026; Vol. 41, Issue 6, pp. -. DOI: 10.1088/1361-6641/ae7b7a DOI |
| 9. | Multi-beam interference in GaN epitaxial layer thickness measurement: impact analysis and method optimization Author: Dongsheng, He; Zhaoyi, Zhang; Jing, Deng Journal: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2026; Vol. 41, Issue 5, pp. -. DOI: 10.1088/1361-6641/ae5ac8 DOI |
| 10. | High-energy krypton-ion irradiation-induced stress and strain in AlGaN/GaN heterojunctions and latent tracks in devices Author: Wang, Wenfeng; Zou, Can; Zhou, Feng; Qian, Junfan; Shu, Chongrui; Yu, Yiteng; Xu, Weizong; Ren, Fangfang; Zhou, Dong; Chen, Dunjun; Zhang, Rong; Zheng, Youdou; Lu, Hai Journal: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2026; Vol. 41, Issue 5, pp. -. DOI: 10.1088/1361-6641/ae6365 DOI |
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