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期刊名字![]() | IEEE TRANSACTIONS ON ELECTRON DEVICES IEEE T ELECTRON DEV (此期刊被最新的JCR期刊SCIE收录) LetPub评分 8.0
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声誉 8.4 影响力 7.5 速度 8.3 | |||||||||||||||||||||||||||||||
| 期刊ISSN | 0018-9383 | 安装APP,查看期刊最新消息
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| E-ISSN | 1557-9646 | |||||||||||||||||||||||||||||||
| 2024-2025最新影响因子 (数据来源于搜索引擎) | 3.2 点击查看影响因子趋势图 | |||||||||||||||||||||||||||||||
| 实时影响因子 | 截止2026年5月06日:3.52 | |||||||||||||||||||||||||||||||
| 2024-2025自引率 | 15.6%点击查看自引率趋势图 | |||||||||||||||||||||||||||||||
| 五年影响因子 | 3.3 | |||||||||||||||||||||||||||||||
| JCI期刊引文指标 | 0.69 | |||||||||||||||||||||||||||||||
| h-index | 165 | |||||||||||||||||||||||||||||||
| CiteScore ( 2026年6月最新版) |
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| 期刊简介 |
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| 期刊官方网站 | http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16 | |||||||||||||||||||||||||||||||
期刊投稿格式模板 VIP专享 |
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| 期刊投稿网址 | https://mc.manuscriptcentral.com/ted | |||||||||||||||||||||||||||||||
| 该期刊中国学者近期发文 - New | A Lightweight Design of True Random Number Generator Based on Superparamagnetic Tunnel Junction Author: Wang, You; Zhang, Chaoyue; Xu, Yefan; Gong, Yu; Peng, Shouzhong; Zhang, Yue; Cui, Yijun; Liu, Weiqiang Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2026; Vol. 73, Issue 5, pp. 3058-3066. DOI: 10.1109/TED.2026.3675612 Mechanistic Study of FS Layer in IGBT: Exploring the Effects of Hydrogen and Phosphorus Implantation on Performance Author: Sun, Yameng; Chen, Anning; Liu, Xun; Song, Yifan; Zhou, Yang; Ma, Kun; Liu, Sheng Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2026; Vol. 73, Issue 5, pp. 2663-2672. DOI: 10.1109/TED.2026.3674820 Evaluation and Analysis of the RF Stress on the Current Collapse Effect in Si-Based RF GaN HEMTs Author: Sun, Shaoyu; Yin, Zhizhen; Song, Shengxing; Ru, Zhanqiang; Song, Helun Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2026; Vol. 73, Issue 5, pp. 2557-2565. DOI: 10.1109/TED.2026.3675630 Demonstration of 8-kV SiC Gate Turn-Off Thyristors With High di/dt for Nanosecond Pulse Fast-Switching Applications Author: Li, Lingfeng; Li, Juntao; Li, Lianghui; Liao, Zhengxiang; Xu, Xingliang; Zhang, Lin; Meng, Yinghao; He, Yingjiang; Li, Zhiqiang Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2026; Vol. 73, Issue 5, pp. 2673-2679. DOI: 10.1109/TED.2026.3674876 | |||||||||||||||||||||||||||||||
| 期刊语言要求 | 经LetPub语言功底雄厚的美籍native English speaker精心编辑的稿件,不仅能满足IEEE TRANSACTIONS ON ELECTRON DEVICES的语言要求,还能让IEEE TRANSACTIONS ON ELECTRON DEVICES编辑和审稿人得到更好的审稿体验,让稿件最大限度地被IEEE TRANSACTIONS ON ELECTRON DEVICES编辑和审稿人充分理解和公正评估。LetPub的专业SCI论文编辑服务(包括SCI论文英语润色,同行资深专家修改润色,SCI论文专业翻译,SCI论文格式排版,专业学术制图等)帮助作者准备稿件,已助力全球15万+作者顺利发表论文。部分发表范例可查看:服务好评 论文致谢 。
提交文稿 | |||||||||||||||||||||||||||||||
| 是否OA开放访问 | No | |||||||||||||||||||||||||||||||
| 通讯方式 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141 | |||||||||||||||||||||||||||||||
| 出版商 | Institute of Electrical and Electronics Engineers Inc. | |||||||||||||||||||||||||||||||
| 涉及的研究方向 | 工程技术-工程:电子与电气 | |||||||||||||||||||||||||||||||
| 出版国家或地区 | UNITED STATES | |||||||||||||||||||||||||||||||
| 出版语言 | English | |||||||||||||||||||||||||||||||
| 出版周期 | Monthly | |||||||||||||||||||||||||||||||
| 出版年份 | 0 | |||||||||||||||||||||||||||||||
| 年文章数 | 1123点击查看年文章数趋势图 | |||||||||||||||||||||||||||||||
| Gold OA文章占比 | 3.63% | |||||||||||||||||||||||||||||||
| 研究类文章占比: 文章 ÷(文章 + 综述) | 100.00% | |||||||||||||||||||||||||||||||
| WOS期刊JCR分区 ( 2024-2025年最新版) | WOS分区等级:2区
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| 期刊分区表预警名单 | 2026年03月发布的新锐学术版:不在预警名单中 2025年03月发布的2025版:不在预警名单中 2024年02月发布的2024版:不在预警名单中 2023年01月发布的2023版:不在预警名单中 2021年12月发布的2021版:不在预警名单中 2020年12月发布的2020版:不在预警名单中 | |||||||||||||||||||||||||||||||
| 《新锐期刊分区表》 ( 2026年3月发布) | 点击查看期刊分区表趋势图
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| 期刊分区表 ( 2025年3月升级版) |
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| 期刊分区表 ( 2023年12月旧的升级版) |
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| SCI期刊收录coverage | Science Citation Index Expanded (SCIE) (2020年1月,原SCI撤销合并入SCIE,统称SCIE) Scopus (CiteScore) | |||||||||||||||||||||||||||||||
| PubMed Central (PMC)链接 | http://www.ncbi.nlm.nih.gov/nlmcatalog?term=0018-9383%5BISSN%5D | |||||||||||||||||||||||||||||||
| 平均审稿速度 | 网友分享经验: 平均4.7个月 | |||||||||||||||||||||||||||||||
| 平均录用比例 | 网友分享经验: 较易 | |||||||||||||||||||||||||||||||
| APC文章处理费信息 | 版面费:平均 3850 元/页 | |||||||||||||||||||||||||||||||
| LetPub助力发表 | 经LetPub编辑的稿件平均录用比例是未经润色的稿件的1.5倍,平均审稿时间缩短40%。众多作者在使用LetPub的专业SCI论文编辑服务(包括SCI论文英语润色,同行资深专家修改润色,SCI论文专业翻译,SCI论文格式排版,专业学术制图等)后论文在IEEE TRANSACTIONS ON ELECTRON DEVICES顺利发表。
快看看作者怎么说吧:服务好评 论文致谢 。 提交文稿 | |||||||||||||||||||||||||||||||
| 期刊常用信息链接 |
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| 中国学者近期发表的论文 | |
| 1. | A Lightweight Design of True Random Number Generator Based on Superparamagnetic Tunnel Junction Author: Wang, You; Zhang, Chaoyue; Xu, Yefan; Gong, Yu; Peng, Shouzhong; Zhang, Yue; Cui, Yijun; Liu, Weiqiang Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2026; Vol. 73, Issue 5, pp. 3058-3066. DOI: 10.1109/TED.2026.3675612 DOI |
| 2. | Mechanistic Study of FS Layer in IGBT: Exploring the Effects of Hydrogen and Phosphorus Implantation on Performance Author: Sun, Yameng; Chen, Anning; Liu, Xun; Song, Yifan; Zhou, Yang; Ma, Kun; Liu, Sheng Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2026; Vol. 73, Issue 5, pp. 2663-2672. DOI: 10.1109/TED.2026.3674820 DOI |
| 3. | Evaluation and Analysis of the RF Stress on the Current Collapse Effect in Si-Based RF GaN HEMTs Author: Sun, Shaoyu; Yin, Zhizhen; Song, Shengxing; Ru, Zhanqiang; Song, Helun Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2026; Vol. 73, Issue 5, pp. 2557-2565. DOI: 10.1109/TED.2026.3675630 DOI |
| 4. | Demonstration of 8-kV SiC Gate Turn-Off Thyristors With High di/dt for Nanosecond Pulse Fast-Switching Applications Author: Li, Lingfeng; Li, Juntao; Li, Lianghui; Liao, Zhengxiang; Xu, Xingliang; Zhang, Lin; Meng, Yinghao; He, Yingjiang; Li, Zhiqiang Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2026; Vol. 73, Issue 5, pp. 2673-2679. DOI: 10.1109/TED.2026.3674876 DOI |
| 5. | Analytical Model of Charge Transfer in Vertical Pinned Photodiode With Planar Transfer Gate for CMOS Image Sensors Author: Li, Jingmin; Chen, Quanmin; Xu, Jiangtao Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2026; Vol. 73, Issue 5, pp. 2600-2608. DOI: 10.1109/TED.2026.3674890 DOI |
| 6. | A Vertical Top-Gate Multichannel Vacuum Triode With Low Subthreshold Swing Author: Tang, Wenhua; Li, Zhihao; Chen, Kerun; Xia, Zhangcong; Li, Jie; Shen, Zhihua; Liu, Yiwei; Wang, Xiao; Niu, Gang; Wu, Shengli Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2026; Vol. 73, Issue 5, pp. 3023-3028. DOI: 10.1109/TED.2026.3674880 DOI |
| 7. | Dual-Gate Architecture-Boosted 800-ppi IGZO ISTFT Array With Super-Nernstian Sensitivity for On-Chip Ion Imaging and Parallel DNA Detection Author: Mei, Zikang; Tang, Wei; Li, Jun; Zhou, Kaiyutai; Chen, Ziwen; Peng, Xiao; Jiang, Wei; Guo, Xiaojun Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2026; Vol. 73, Issue 5, pp. 3149-3156. DOI: 10.1109/TED.2026.3676451 DOI |
| 8. | Low-Voltage Solution-Processed Li-Doped CuI Thin-Film Transistors for Neuromorphic Computing Author: Liu, Junting; Dou, Wei; Liu, Sunwen; Xiang, Rui; Xu, Xiaodong; Chen, Pengfei; Peng, Yuling; Tang, Dongsheng Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2026; Vol. 73, Issue 5, pp. 2846-2851. DOI: 10.1109/TED.2026.3676042 DOI |
| 9. | A High-Speed and Low-Power 1.2-kV SiC ASG-MOSFET With Enhanced Short-Circuit Robustness Author: Zhang, Yibo; Tang, Xiaoyan; Yuan, Hao; Guo, Jingkai; Wang, Chenyu; Zhang, Zhiwen; Yang, Haohang; Liu, Keyu; Zhou, Yu; Du, Fengyu; Li, Zhaojun; Zhang, Yuming; Song, Qingwen Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2026; Vol. 73, Issue 5, pp. 2546-2550. DOI: 10.1109/TED.2026.3674078 DOI |
| 10. | AI-Assisted Design of FISO CFP-DEMOS Devices via Transfer Learning and Multiobjective Optimization Author: Huang, Xiaoyun; Song, Yixian; Tang, Hongyu; Pan, Yan; Ye, Yiting; Meng, Boying; Wang, Shuang; Wang, Zenan; Gao, Dawei; Xu, Kai Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2026; Vol. 73, Issue 5, pp. 2680-2688. DOI: 10.1109/TED.2026.3674877 DOI |
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