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Size effects in band gap bowing in nitride semiconducting alloys

[PDF] from au.dkI Gorczyca, T Suski, NE Christensen… - Physical Review B, 2011 - APS
Chemical and size contributions to the band gap bowing of nitride semiconducting alloys (Inx
Ga1−x N, Inx Al1−x N, and Alx Ga1−x N) are analyzed. It is shown that the band gap deformation
potentials of the binary constituents determine the gap bowing in the ternary alloys. The ...
Cited by 1 - Related articles - All 3 versions

Band gap bowing in quaternary nitride semiconducting alloys

I Gorczyca, T Suski, NE Christensen… - Applied Physics Letters, 2011 - link.aip.org
Structural properties of InxGayAl1−x−yN alloys are derived from total-energy minimization within
the local-density approximation (LDA). The electronic properties are studied by band structure
calculations including a semiempirical correction for the “LDA gap error.” The effects of ...
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Deflection Reduction of GaN Wafer Bowing by Coating or Cutting Grooves in the Substrates

[PDF] from 159.226.36.49T Sun, MQ Wang, YJ Sun, BP Wang… - Chinese Physics …, 2011 - iopscience.iop.org
Page 1. Deflection Reduction of GaN Wafer Bowing by Coating or Cutting Grooves in the
Substrates This article has been downloaded from IOPscience. ... Vol.28,No.4(2011)047303
Deflection Reduction of GaN Wafer Bowing by Coating or Cutting Grooves in the Substrates * ...
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Total knee replacement in patients with significant femoral bowing in the coronal plane: A COMPARISON OF CONVENTIONAL AND COMPUTER-ASSISTED …

TW Huang, WH Hsu, KT Peng… - Journal of Bone and Joint …, 2011 - JBJS (Br)
We conducted a retrospective study to investigate the effect of femoral bowing on the placement
of components in total knee replacement (TKR), with regard to its effect on reestablishing the
correct mechanical axis, as we hypothesised that computer-assisted total knee ...
Cited by 1 - Related articles - All 3 versions

Bowing of biexciton binding in Al x Ga N ternary alloys

Y Yamada - 2011 - spie.org
Biexciton binding in Al x Ga 1-x N ternary alloys as a function of alloy composition is reviewed
on the basis of our recent experimental observations. The biexciton binding energy in GaN and
AlN was evaluated to be 5.6 and 19.3 meV, respectively. The biexciton binding energy in ...
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