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[PDF] Drastic Reduction of Dislocation Density in Semipolar (11 22) GaN Stripe Crystal on Si Substrate by Dual Selective Metal–Organic Vapor Phase Epitaxy

[PDF] from jsap.jpT Murase, T Tanikawa, Y Honda… - Japanese Journal of …, 2011 - jjap.jsap.jp
A drastic reduction of the dislocation density in a semipolar (11 22) GaN stripe on a patterned
Si substrate was achieved by the two-step selective growth of a GaN stripe. After depositing a
SiO2 mask on the (11 22) and (000 1) faces of a GaN stripe grown on a (113) Si ...
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A Strategic Review Of Reduction Of Dislocation Density At The Heterogenious Junction Of Gan Epilayer On Foreign Substrate

[PDF] from sumdu.edu.uaSD Bhattacharyya, P Mukhopadhyay, P Das… - 2011 - essuir.sumdu.edu.ua
... A STRATEGIC REVIEW OF REDUCTION OF DISLOCATION DENSITY AT THE HETEROGENIOUS
JUNCTION OF GAN EPILAYER ON FOREIGN SUBSTRATE ... A good quality metamorphic buffer
can only be achieved by reduction of dislocation density at the heterojunction. ...
Related articles - All 4 versions

Surgical reconstruction using suture anchor for dislocation of the carpometacarpal joint of the thumb: a case report

G Okita, S Anayama, N Sato… - Archives of orthopaedic and …, 2011 - Springer
... injury. This is the first report in the liter- ature performing ligamentous reconstruction
using suture anchors in a case of severe joint instability after manipu- lative reduction
for dislocation of the first carpometacarpal joint. Our surgical ...
Related articles - All 3 versions

Enhanced optical performance of amber emitting quantum dots incorporated InGaN/GaN light-emitting diodes with growth on UV-enhanced electrochemically etched …

CB Soh, W Liu, H Hartono, NSS Ang… - Applied Physics …, 2011 - link.aip.org
... of III-nitride LEDs. The reduction in dislocation density in the overgrown GaN is
studied by cross-section transmission electron microscopy (TEM) and the pore
density is determined from atomic force microscopy (AFM) scan. ...
Related articles - All 4 versions

Enhancement of strength and stability of nanostructured Ni by small amounts of solutes

HW Zhang, K Lu, R Pippan, X Huang… - Scripta Materialia, 2011 - Elsevier
... a result of dislocation–solute interaction reducing the mobility of dislocations in both two and
three dimensions [6]. Such a reduction in dislocation mobility may also result in deformation-
induced twinning; however, this was observed only to a limited extent in the three samples. ...
Related articles

[PDF] Drastic Reduction of Dislocation Density in Semipolar (11 22) GaN Stripe Crystal on Si Substrate by Dual Selective Metal–Organic Vapor Phase Epitaxy

[PDF] from jsap.jpT Murase, T Tanikawa, Y Honda… - Japanese Journal of …, 2011 - jjap.jsap.jp
A drastic reduction of the dislocation density in a semipolar (11 22) GaN stripe on a patterned
Si substrate was achieved by the two-step selective growth of a GaN stripe. After depositing a
SiO2 mask on the (11 22) and (000 1) faces of a GaN stripe grown on a (113) Si ...
Related articles - View as HTML - All 4 versions

A Strategic Review Of Reduction Of Dislocation Density At The Heterogenious Junction Of Gan Epilayer On Foreign Substrate

[PDF] from sumdu.edu.uaSD Bhattacharyya, P Mukhopadhyay, P Das… - 2011 - essuir.sumdu.edu.ua
... A STRATEGIC REVIEW OF REDUCTION OF DISLOCATION DENSITY AT THE HETEROGENIOUS
JUNCTION OF GAN EPILAYER ON FOREIGN SUBSTRATE ... A good quality metamorphic buffer
can only be achieved by reduction of dislocation density at the heterojunction. ...
Related articles - All 4 versions

Surgical reconstruction using suture anchor for dislocation of the carpometacarpal joint of the thumb: a case report

G Okita, S Anayama, N Sato… - Archives of orthopaedic and …, 2011 - Springer
... injury. This is the first report in the liter- ature performing ligamentous reconstruction
using suture anchors in a case of severe joint instability after manipu- lative reduction
for dislocation of the first carpometacarpal joint. Our surgical ...
Related articles - All 3 versions

Enhanced optical performance of amber emitting quantum dots incorporated InGaN/GaN light-emitting diodes with growth on UV-enhanced electrochemically etched …

CB Soh, W Liu, H Hartono, NSS Ang… - Applied Physics …, 2011 - link.aip.org
... of III-nitride LEDs. The reduction in dislocation density in the overgrown GaN is
studied by cross-section transmission electron microscopy (TEM) and the pore
density is determined from atomic force microscopy (AFM) scan. ...
Related articles - All 4 versions

Enhancement of strength and stability of nanostructured Ni by small amounts of solutes

HW Zhang, K Lu, R Pippan, X Huang… - Scripta Materialia, 2011 - Elsevier
... a result of dislocation–solute interaction reducing the mobility of dislocations in both two and
three dimensions [6]. Such a reduction in dislocation mobility may also result in deformation-
induced twinning; however, this was observed only to a limited extent in the three samples. ...
Related articles

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[PDF] Drastic Reduction of Dislocation Density in Semipolar (11 22) GaN Stripe Crystal on Si Substrate by Dual Selective Metal–Organic Vapor Phase Epitaxy

[PDF] Drastic Reduction of Dislocation Density in Semipolar (11 22) GaN Stripe Crystal on Si Substrate by Dual Selective Metal–Organic Vapor Phase Epitaxy